The paper presents the results of research on the effect of laser photolithography on graphene oxide (GO) fixed on the silicon wafer and PVC plate (polyvinyl chloride). Before fixing the graphene oxide, the surface was treated with plasma cleaning in the argon atmosphere. Then deposition with AZ4533 photoresist and laser photolithography were carried out. Analysis of the spectral characteristics and structural tests proved that graphene oxide was not damaged during exposing to a laser beam. The laser photolithography process was followed with observation of typical FTIR-ATR bonds originating from COOH, C=O and C-O-C typical for GO. The pattern (on the GO + AZ4533 coating) was exposed to the laser beam (GaN) and revealed by a developing agent. That was a base for continuation of further research with a purpose of ion etching.
Presented paper shows results of the tensile strength of the rGO-PDMS composite (pure PDMS doped with reduced graphene oxide (rGO). As a result, the relative elongation of the rGO-PDMS was obtained reaching 600% as compared to control samples before breaking of the composite. Microfractographic measurements of fracture in static tensile test showed delamination in places where rGO flakes were present, what favored the initiation of breaking process. The decrease of the Young module was observed by 8% when PDMS was doped with reduced graphene oxide.